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FP25R12W2T4_B11
manufacturer:
Infineon Technologies
Description:
IGBT Modules IGBT 1200V 25A
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
39 A
Collector- Emitter Voltage VCEO Max ::
1200 V
Pd - Power Dissipation ::
175 W
Maximum Operating Temperature ::
+ 150 C
Packaging ::
Tray
Collector-Emitter Saturation Voltage ::
2.25 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
FP25R12W2T4_B11
Introduction
The FP25R12W2T4_B11,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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