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Home > Products > > FZ1200R17KF6C_B2

FZ1200R17KF6C_B2

Name: FZ1200R17KF6C_B2
Brand: Beijing Silk Road Enterprise Management Services Co.,LTD
SKU: FZ1200R17KF6C_B2
Availability: InStock

manufacturer:

Infineon Technologies

Description:

IGBT Modules N-CH 1.7KV 1.95KA

Category:

Semiconductors

Specifications

Gate-Emitter Leakage Current ::

400 NA

Product Category ::

IGBT Modules

Continuous Collector Current At 25 C ::

1950 A

Pd - Power Dissipation ::

9.6 KW

Collector- Emitter Voltage VCEO Max ::

1700 V

Package / Case ::

IHM130

Maximum Operating Temperature ::

+ 125 C

Configuration ::

Dual Common Emitter Common Gate

Collector-Emitter Saturation Voltage ::

2.6 V

Product ::

IGBT Silicon Modules

Manufacturer ::

Infineon Technologies

Model Number:

FZ1200R17KF6C_B2

Introduction

The FZ1200R17KF6C_B2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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Stock:

MOQ:

Address:

E-mail: kf@maoyt.com

Phone: 86--15112670997

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