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FF300R07ME4_B11
manufacturer:
Infineon Technologies
Description:
IGBT Modules IGBT Module 300A 650V
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
390 A
Pd - Power Dissipation ::
1100 W
Collector- Emitter Voltage VCEO Max ::
650 V
Package / Case ::
Module
Maximum Operating Temperature ::
+ 150 C
Configuration ::
Dual
Collector-Emitter Saturation Voltage ::
1.55 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
FF300R07ME4_B11
Introduction
The FF300R07ME4_B11,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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