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FPF2G120BF07AS
manufacturer:
Fairchild Semiconductor
Description:
IGBT Modules High Power Module
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 2 UA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
40 A
Pd - Power Dissipation ::
98 W, 140 W, 156 W
Collector- Emitter Voltage VCEO Max ::
650 V
Package / Case ::
F2
Maximum Operating Temperature ::
+ 150 C
Packaging ::
Tray
Configuration ::
Triple
Collector-Emitter Saturation Voltage ::
1.55 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Fairchild Semiconductor
Model Number:
FPF2G120BF07AS
Introduction
The FPF2G120BF07AS,from Fairchild Semiconductor,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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