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BSM25GP120
manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 25A PIM
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
300 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
45 A
Pd - Power Dissipation ::
230 W
Collector- Emitter Voltage VCEO Max ::
1600 V
Package / Case ::
EconoPIM2
Maximum Operating Temperature ::
+ 125 C
Packaging ::
Tray
Configuration ::
Array 7
Collector-Emitter Saturation Voltage ::
2.55 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
BSM25GP120
Introduction
The BSM25GP120,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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