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FD401R17KF6C_B2
manufacturer:
Infineon Technologies
Description:
IGBT Modules N-CH 1.7KV 650A
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
650 A
Pd - Power Dissipation ::
3.1 KW
Collector- Emitter Voltage VCEO Max ::
1700 V
Package / Case ::
IHM73
Maximum Operating Temperature ::
+ 125 C
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2.6 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
FD401R17KF6C_B2
Introduction
The FD401R17KF6C_B2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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