english
IXGK50N120C3H1
manufacturer:
IXYS
Description:
IGBT Modules High Frequency Range 40khz C-IGBT w/Diode
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 100 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
95 A
Collector- Emitter Voltage VCEO Max ::
1.2 KV
Package / Case ::
TO-264-3
Maximum Operating Temperature ::
+ 150 C
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2.6 V
Product ::
IGBT Silicon Modules
Manufacturer ::
IXYS
Model Number:
IXGK50N120C3H1
Introduction
The IXGK50N120C3H1,from IXYS,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: