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BSM75GD120DN2
manufacturer:
Infineon Technologies
Description:
IGBT Modules 1200V 75A 3-PHASE
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
320 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
103 A
Pd - Power Dissipation ::
520 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
EconoPACK 3A
Maximum Operating Temperature ::
+ 150 C
Configuration ::
Hex
Collector-Emitter Saturation Voltage ::
2.5 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
BSM75GD120DN2
Introduction
The BSM75GD120DN2,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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