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BSM50GD120DN2E3226
manufacturer:
Infineon Technologies
Description:
IGBT Modules N-CH 1.2KV 50A
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
200 NA
Product Category ::
IGBT Modules
Continuous Collector Current At 25 C ::
50 A
Pd - Power Dissipation ::
350 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
EconoPACK 2
Maximum Operating Temperature ::
+ 150 C
Configuration ::
Hex
Collector-Emitter Saturation Voltage ::
2.5 V
Product ::
IGBT Silicon Modules
Manufacturer ::
Infineon Technologies
Model Number:
BSM50GD120DN2E3226
Introduction
The BSM50GD120DN2E3226,from Infineon Technologies,is IGBT Modules.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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