FGB20N60SFD
Specifications
Gate-Emitter Leakage Current ::
400 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
40 A
Pd - Power Dissipation ::
83 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-263AB
Packaging ::
Reel
Maximum Gate Emitter Voltage ::
20 V
Collector-Emitter Saturation Voltage ::
2.8 V
Manufacturer ::
Fairchild Semiconductor
Model Number:
FGB20N60SFD
Introduction
The FGB20N60SFD,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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