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G160N60
manufacturer:
onsemi
Description:
IGBT Transistors Dis High Perf IGBT
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
160 A
Pd - Power Dissipation ::
250 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-264-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2.1 V
Manufacturer ::
Onsemi
Model Number:
G160N60
Introduction
The G160N60,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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