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VS-GP300TD60S
manufacturer:
Vishay Semiconductors
Description:
IGBT Transistors Ic 300A Vce(On)1.30V Half Brdge Trench PT
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 500 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Chassis
Continuous Collector Current At 25 C ::
580 A
Pd - Power Dissipation ::
1.136 KW
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
DIAP
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
20 V
Configuration ::
Dual
Collector-Emitter Saturation Voltage ::
-
Manufacturer ::
Vishay Semiconductors
Model Number:
VS-GP300TD60S
Introduction
The VS-GP300TD60S,from Vishay Semiconductors,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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