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STGB3NC120HDT4
manufacturer:
STMicroelectronics
Description:
IGBT Transistors IGBT 1200V 7A PowerMESH Ultrafast
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
14 A
Pd - Power Dissipation ::
75 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
D2PAK
Packaging ::
Reel
Maximum Gate Emitter Voltage ::
20 V
Collector-Emitter Saturation Voltage ::
2.3 V
Manufacturer ::
STMicroelectronics
Model Number:
STGB3NC120HDT4
Introduction
The STGB3NC120HDT4,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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