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STGD19N40LZ
manufacturer:
STMicroelectronics
Description:
IGBT Transistors IGBT & Power Bipolar
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
625 UA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Pd - Power Dissipation ::
125 W
Collector- Emitter Voltage VCEO Max ::
390 V
Package / Case ::
DPAK-3
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
16 V
Packaging ::
Reel
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.35 V
Manufacturer ::
STMicroelectronics
Model Number:
STGD19N40LZ
Introduction
The STGD19N40LZ,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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