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FGB7N60UNDF
manufacturer:
Fairchild Semiconductor
Description:
IGBT Transistors 600V 7A NPT IGBT
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 10 UA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
14 A
Pd - Power Dissipation ::
83 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-263AB (D2 PAK)
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Reel
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2.1 V
Manufacturer ::
Fairchild Semiconductor
Model Number:
FGB7N60UNDF
Introduction
The FGB7N60UNDF,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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