english
IXXH100N60B3
manufacturer:
IXYS
Description:
IGBT Transistors XPT IGBT B3-Class 600V/210Amp
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
210 A
Pd - Power Dissipation ::
830 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-247AD
Maximum Operating Temperature ::
+ 150 C
Packaging ::
Tube
Maximum Gate Emitter Voltage ::
20 V
Collector-Emitter Saturation Voltage ::
1.8 V
Manufacturer ::
IXYS
Model Number:
IXXH100N60B3
Introduction
The IXXH100N60B3,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: