english
STGD5H60DF
manufacturer:
STMicroelectronics
Description:
IGBT Transistors Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+ / - 250 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
10 A
Pd - Power Dissipation ::
83 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
DPAK-3
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Reel
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.5 V
Manufacturer ::
STMicroelectronics
Model Number:
STGD5H60DF
Introduction
The STGD5H60DF,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: