STGP10NC60HD
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Pd - Power Dissipation ::
56 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
DPAK-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.9 V
Manufacturer ::
STMicroelectronics
Model Number:
STGP10NC60HD
Introduction
The STGP10NC60HD,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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