english
APT50GN120L2DQ2G
manufacturer:
Microsemi
Description:
IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
600 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
134 A
Pd - Power Dissipation ::
543 W
Collector- Emitter Voltage VCEO Max ::
1.2 KV
Package / Case ::
TO-264-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
30 V
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.7 V
Manufacturer ::
Microsemi
Model Number:
APT50GN120L2DQ2G
Introduction
The APT50GN120L2DQ2G,from Microsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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