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FII30-06D
manufacturer:
IXYS
Description:
IGBT Transistors 30 Amps 600V
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
200 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
30 A
Pd - Power Dissipation ::
100 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
ISOPLUS I4-PAC-5
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Tube
Configuration ::
Dual
Collector-Emitter Saturation Voltage ::
1.9 V
Manufacturer ::
IXYS
Model Number:
FII30-06D
Introduction
The FII30-06D,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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