VS-GA400TD60S
Specifications
Gate-Emitter Leakage Current ::
200 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Pd - Power Dissipation ::
1563 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
DUAL INT-A-INK
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
20 V
Packaging ::
Bulk
Configuration ::
Dual
Continuous Collector Current At 25 C ::
750 A
Manufacturer ::
Vishay Semiconductors
Model Number:
VS-GA400TD60S
Introduction
The VS-GA400TD60S,from Vishay Semiconductors,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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