english
IGB10N60TATMA1
manufacturer:
Infineon Technologies
Description:
IGBT Transistors Low Loss IGBT Trench Stop&Fieldstop Tech
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
24 A
Pd - Power Dissipation ::
110 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-263-3
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
4.6 V
Packaging ::
Reel
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.8 V
Manufacturer ::
Infineon Technologies
Model Number:
IGB10N60TATMA1
Introduction
The IGB10N60TATMA1,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: