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IXGT10N170
manufacturer:
IXYS
Description:
IGBT Transistors 20 Amps 1700 V 4 V Rds
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
20 A
Pd - Power Dissipation ::
110 W
Collector- Emitter Voltage VCEO Max ::
1.7 KV
Package / Case ::
TO-268-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2.7 V
Manufacturer ::
IXYS
Model Number:
IXGT10N170
Introduction
The IXGT10N170,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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