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MMIX1X200N60B3
manufacturer:
IXYS
Description:
IGBT Transistors SMPD IGBTs Power Device
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
200 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Pd - Power Dissipation ::
625 W
Continuous Collector Current At 25 C ::
223 A
Package / Case ::
SMDP-21
Maximum Operating Temperature ::
+ 175 C
Packaging ::
Tube
Configuration ::
Single
Manufacturer ::
IXYS
Model Number:
MMIX1X200N60B3
Introduction
The MMIX1X200N60B3,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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