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NGTB50N120FL2WAG
manufacturer:
onsemi
Description:
IGBT Transistors 1200V/50 FAST IGBT FSII T
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
200 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
200 A
Pd - Power Dissipation ::
268 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
TO-247-4
Maximum Operating Temperature ::
+ 175 C
Packaging ::
Tube
Maximum Gate Emitter Voltage ::
20 V
Collector-Emitter Saturation Voltage ::
2.8 V
Manufacturer ::
Onsemi
Model Number:
NGTB50N120FL2WAG
Introduction
The NGTB50N120FL2WAG,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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