NGB8206ANSL3G
Specifications
Gate-Emitter Leakage Current ::
350 UA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Pd - Power Dissipation ::
150 W
Collector- Emitter Voltage VCEO Max ::
390 V
Package / Case ::
D2PAK-3
Maximum Operating Temperature ::
+ 175 C
Packaging ::
Tube
Maximum Gate Emitter Voltage ::
15 V
Continuous Collector Current At 25 C ::
20 A
Manufacturer ::
Littelfuse
Model Number:
NGB8206ANSL3G
Introduction
The NGB8206ANSL3G,from Littelfuse,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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