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HGT1S20N60C3S9A
manufacturer:
Fairchild Semiconductor
Description:
IGBT Transistors 45a 600V N-Ch IGBT UFS Series
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 250 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
45 A
Pd - Power Dissipation ::
164 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-263AB-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Reel
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.4 V
Manufacturer ::
Fairchild Semiconductor
Model Number:
HGT1S20N60C3S9A
Introduction
The HGT1S20N60C3S9A,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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