english
HGTG30N60C3D
manufacturer:
Fairchild Semiconductor
Description:
IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
63 A
Pd - Power Dissipation ::
208 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-247-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.5 V
Manufacturer ::
Fairchild Semiconductor
Model Number:
HGTG30N60C3D
Introduction
The HGTG30N60C3D,from Fairchild Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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