NGTB40N120FL2WAG
Specifications
Gate-Emitter Leakage Current ::
200 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Pd - Power Dissipation ::
268 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
TO-247-4
Maximum Operating Temperature ::
- 55 C
Maximum Gate Emitter Voltage ::
30 V
Packaging ::
Tube
Configuration ::
Single
Continuous Collector Current At 25 C ::
160 A
Manufacturer ::
Onsemi
Model Number:
NGTB40N120FL2WAG
Introduction
The NGTB40N120FL2WAG,from onsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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