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STGWA25H120DF2
manufacturer:
STMicroelectronics
Description:
IGBT Transistors IGBT & Power Bipolar
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
250 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
50 A
Collector- Emitter Voltage VCEO Max ::
1200 V
Pd - Power Dissipation ::
375 W
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
20 V
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
2.5 V
Manufacturer ::
STMicroelectronics
Model Number:
STGWA25H120DF2
Introduction
The STGWA25H120DF2,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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