IRGS4B60KD1TRLP
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Pd - Power Dissipation ::
63 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-263-3
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Reel
Configuration ::
Single
Continuous Collector Current At 25 C ::
11 A
Manufacturer ::
Infineon Technologies
Model Number:
IRGS4B60KD1TRLP
Introduction
The IRGS4B60KD1TRLP,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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