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APT45GP120J
manufacturer:
Microsemi
Description:
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Screw
Continuous Collector Current At 25 C ::
34 A
Pd - Power Dissipation ::
329 W
Collector- Emitter Voltage VCEO Max ::
1.2 KV
Package / Case ::
SOT-227-4
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Configuration ::
N-Channel
Collector-Emitter Saturation Voltage ::
3.3 V
Manufacturer ::
Microsemi
Model Number:
APT45GP120J
Introduction
The APT45GP120J,from Microsemi,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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