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RGT8NS65DGTL
manufacturer:
ROHM Semiconductor
Description:
IGBT Transistors 650V 4A IGBT Stop Trench
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 200 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
8 A
Pd - Power Dissipation ::
65 W
Collector- Emitter Voltage VCEO Max ::
650 V
Package / Case ::
TO-263-3
Maximum Operating Temperature ::
+ 175 C
Packaging ::
Reel
Maximum Gate Emitter Voltage ::
+/- 30 V
Collector-Emitter Saturation Voltage ::
1.65 V
Manufacturer ::
ROHM Semiconductor
Model Number:
RGT8NS65DGTL
Introduction
The RGT8NS65DGTL,from ROHM Semiconductor,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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