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STGFW80V60F
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors IGBT & Power Bipolar
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
250 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
120 A
Pd - Power Dissipation ::
79 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-3PF
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.85 V
Manufacturer ::
STMicroelectronics
Model Number:
STGFW80V60F
Introduction
The STGFW80V60F,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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