english
IRGP30B120KDPBF
manufacturer:
Infineon Technologies
Description:
IGBT Transistors 1200V ULTRAFAST 5-40 KHZ COPACK IGBT
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
60 A
Pd - Power Dissipation ::
300 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
TO-247AD-3
Maximum Operating Temperature ::
+ 150 C
Packaging ::
Tube
Maximum Gate Emitter Voltage ::
+/- 20 V
Collector-Emitter Saturation Voltage ::
2.28 V
Manufacturer ::
Infineon Technologies
Model Number:
IRGP30B120KDPBF
Introduction
The IRGP30B120KDPBF,from Infineon Technologies,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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