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IRGP6650D-EPBF
manufacturer:
IR / Infineon
Description:
IGBT Transistors 600V UltraFast IGBT TO-247
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
80 A
Pd - Power Dissipation ::
306 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-247AD-3
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
20 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.65 V
Manufacturer ::
IR / Infineon
Model Number:
IRGP6650D-EPBF
Introduction
The IRGP6650D-EPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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