STGD3NB60SDT4
Specifications
Gate-Emitter Leakage Current ::
+/- 100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
SMD/SMT
Continuous Collector Current At 25 C ::
6 A
Pd - Power Dissipation ::
48 W
Collector- Emitter Voltage VCEO Max ::
600 V
Package / Case ::
TO-252-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Packaging ::
Reel
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.5 V
Manufacturer ::
STMicroelectronics
Model Number:
STGD3NB60SDT4
Introduction
The STGD3NB60SDT4,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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