english
IRG8P15N120KD-EPBF
Manufacturer:
IR / Infineon
Description:
IGBT Transistors 1200V IGBT GEN8
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
100 NA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
30 A
Pd - Power Dissipation ::
125 W
Collector- Emitter Voltage VCEO Max ::
1200 V
Package / Case ::
TO-247AD-3
Maximum Operating Temperature ::
+ 150 C
Maximum Gate Emitter Voltage ::
30 V
Packaging ::
Tube
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.7 V
Manufacturer ::
IR / Infineon
Model Number:
IRG8P15N120KD-EPBF
Introduction
The IRG8P15N120KD-EPBF,from IR / Infineon,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: