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N25W256A11EF840E
manufacturer:
Micron Technology
Description:
IC FLASH 256M SPI 100LBGA
Category:
Semiconductors
Specifications
Technology ::
FLASH - NOR
Product Category ::
Memory ICs
Memory Type ::
Non-Volatile
Factory Stock ::
0
Write Cycle Time - Word, Page ::
-
Supplier Device Package ::
100-LBGA (14x18)
Access Time ::
-
Memory Format ::
Flash
Part Status ::
Active
Memory Size ::
256Mb (64M X 4)
Packaging ::
Tray
@ Qty ::
0
Operating Temperature ::
-40°C ~ 85°C (TA)
Minimum Quantity ::
1920
Memory Interface ::
SPI
Package / Case ::
100-LBGA
Mounting Type ::
Surface Mount
Clock Frequency ::
108MHz
Voltage - Supply ::
1.7 V ~ 2 V
Series ::
-
Manufacturer ::
Micron Technology
Model Number:
N25W256A11EF840E
Introduction
The N25W256A11EF840E,from Micron Technology,is Memory ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MT25QU128ABA1EW7-0SIT |
IC FLASH 128M SPI 133MHZ 8WPDFN
|
|
|
|
MT29F2G08ABAEAH4:E TR |
IC FLASH 2G PARALLEL 63VFBGA
|
|
|
|
MT28EW256ABA1LPC-0SIT |
IC FLASH 256M PARALLEL 64LBGA
|
|
|
|
MT29F4G08ABAEAWP-IT:E TR |
IC FLASH 4G PARALLEL 48TSOP
|
|
|
|
MT29F4G08ABBDAHC-IT:D TR |
IC FLASH 4G PARALLEL 63VFBGA
|
|
|
|
MT25QL01GBBB8ESF-0SIT |
IC FLASH 1G SPI 133MHZ 16SOP2
|
|
|
|
MT40A512M8RH-083E:B |
IC DRAM 4G PARALLEL 78FBGA
|
|
|
|
MT47H128M16RT-25E IT:C |
IC DRAM 2G PARALLEL 84FBGA
|
|
|
|
MT29F1G08ABAEAH4:E TR |
IC FLASH 1G PARALLEL 63VFBGA
|
|
|
|
MT48H16M32LFB5-6 IT:C TR |
IC DRAM 512M PARALLEL 90VFBGA
|
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