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NAND256R3A2BZA6E
manufacturer:
Micron Technology
Description:
IC FLASH 256M PARALLEL 55VFBGA
Category:
Semiconductors
Specifications
Technology ::
FLASH - NAND
Product Category ::
Memory ICs
Memory Type ::
Non-Volatile
Factory Stock ::
0
Write Cycle Time - Word, Page ::
50ns
Supplier Device Package ::
55-VFBGA (8x10)
Access Time ::
50ns
Memory Format ::
Flash
Part Status ::
Obsolete
Memory Size ::
256Mb (32M X 8)
Packaging ::
Tray
@ Qty ::
0
Operating Temperature ::
-40°C ~ 85°C (TA)
Minimum Quantity ::
1518
Memory Interface ::
Parallel
Package / Case ::
55-TFBGA
Mounting Type ::
Surface Mount
Clock Frequency ::
-
Voltage - Supply ::
1.7 V ~ 1.95 V
Series ::
-
Manufacturer ::
Micron Technology
Model Number:
NAND256R3A2BZA6E
Introduction
The NAND256R3A2BZA6E,from Micron Technology,is Memory ICs.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
|---|---|---|---|
|
|
MT25QU128ABA1EW7-0SIT |
IC FLASH 128M SPI 133MHZ 8WPDFN
|
|
|
|
MT29F2G08ABAEAH4:E TR |
IC FLASH 2G PARALLEL 63VFBGA
|
|
|
|
MT28EW256ABA1LPC-0SIT |
IC FLASH 256M PARALLEL 64LBGA
|
|
|
|
MT29F4G08ABAEAWP-IT:E TR |
IC FLASH 4G PARALLEL 48TSOP
|
|
|
|
MT29F4G08ABBDAHC-IT:D TR |
IC FLASH 4G PARALLEL 63VFBGA
|
|
|
|
MT25QL01GBBB8ESF-0SIT |
IC FLASH 1G SPI 133MHZ 16SOP2
|
|
|
|
MT40A512M8RH-083E:B |
IC DRAM 4G PARALLEL 78FBGA
|
|
|
|
MT47H128M16RT-25E IT:C |
IC DRAM 2G PARALLEL 84FBGA
|
|
|
|
MT29F1G08ABAEAH4:E TR |
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|
|
|
|
MT48H16M32LFB5-6 IT:C TR |
IC DRAM 512M PARALLEL 90VFBGA
|
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