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A2T09VD250NR1

manufacturer:
NXP USA Inc.
Description:
RF Power Discrete Transistors
Category:
Semiconductors
Specifications
Product Category ::
RF Amplifier
Gain (dB) ::
22.5
Output Power (W) ::
65
Avg Power (W) ::
65
Frequency Min (GHz) ::
0.716
Process ::
LDMOS
Frequency Max (GHz) ::
0.96
Manufacturer ::
NXP USA Inc.
Model Number:
A2T09VD250NR1
Introduction
The A2T09VD250NR1,from NXP USA Inc.,is RF Amplifier.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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