BFR740L3RHE6327XTSA1
manufacturer:
Infineon Technologies
Description:
RF Bipolar Transistors NPN Silicn Germanium RF Transistor
Category:
Semiconductors
Specifications
Transistor Polarity ::
NPN
Technology ::
SiGe
Product Category ::
RF Bipolar Transistors
Mounting Style ::
SMD/SMT
Transistor Type ::
Bipolar
Collector- Emitter Voltage VCEO Max ::
4 V
Package / Case ::
TSLP-3
DC Collector/Base Gain Hfe Min ::
160
Packaging ::
Reel
Manufacturer ::
Infineon Technologies
Emitter- Base Voltage VEBO ::
1.2 V
Continuous Collector Current ::
40 MA
Introduction
The BFR740L3RHE6327XTSA1,from Infineon Technologies,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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