NE3508M04-T2-A
manufacturer:
CEL
Description:
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
GaAs
Product Category ::
RF JFET Transistors
Mounting Style ::
SMD/SMT
Gain ::
14 DB
Transistor Type ::
HFET
Pd - Power Dissipation ::
175 MW
Package / Case ::
FTSMM-4 (M04)
Maximum Operating Temperature ::
+ 150 C
Vds - Drain-Source Breakdown Voltage ::
4 V
Packaging ::
Reel
Id - Continuous Drain Current ::
120 MA
Vgs - Gate-Source Breakdown Voltage ::
- 3 V
Manufacturer ::
CEL
Introduction
The NE3508M04-T2-A,from CEL,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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| Image | Part # | Description | |
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|
|
CE3521M4 |
RF JFET Transistors 20GHz NF .70dB Ga 11.9dB -55C +125C
|
|
|
|
CE3520K3 |
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