NPT2022
manufacturer:
MACOM
Description:
RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
GaN Si
Product Category ::
RF JFET Transistors
Mounting Style ::
Screw
Gain ::
21 DB
Transistor Type ::
HEMT
Output Power ::
100 W
Maximum Operating Temperature ::
+ 85 C
Vds - Drain-Source Breakdown Voltage ::
160 V
Packaging ::
Tray
Id - Continuous Drain Current ::
24 MA
Vgs - Gate-Source Breakdown Voltage ::
3 V
Manufacturer ::
MACOM
Introduction
The NPT2022,from MACOM,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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