english
FHX35X
Manufacturer:
Sumitomo Electric
Description:
12 GHz, 8.5 to 10 dB Gain GaAs HEMT
Category:
Semiconductors
Specifications
Noise Figure ::
1.2 To 1.6 DB
Product Category ::
RF JFET Transistors
Gain ::
8.5 To 10 DB
Power ::
17 DBM
Input Power ::
-10 To 8 DBm
Storage Temperature ::
-65 To 175 Degree C
Power(W) ::
0 To 0.05 W
Packaging ::
Box
Package ::
SMD
RoHS ::
Green Available
Drain Current ::
15 To 85 MA
Supply Voltage ::
2 V
Frequency ::
12 GHz
Manufacturer ::
Sumitomo Electric
Model Number:
FHX35X
Introduction
The FHX35X,from Sumitomo Electric,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: