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Home > products > Semiconductors > A3G26H501W17SR3

A3G26H501W17SR3

manufacturer:
NXP USA Inc.
Description:
RF Power Discrete Transistors
Category:
Semiconductors
Specifications
Product Category ::
RF Amplifier
Gain (dB) ::
14.5
Output Power (W) ::
500
Avg Power (W) ::
56
Frequency Min (GHz) ::
2.496
Process ::
GaN
Frequency Max (GHz) ::
2.69
Manufacturer ::
NXP USA Inc.
Introduction
The A3G26H501W17SR3,from NXP USA Inc.,is RF Amplifier.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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