BLA6H0912-500,112
manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors TRANS RADAR PWR LDMOS
Category:
Semiconductors
Specifications
Transistor Polarity ::
N-Channel
Technology ::
Si
Product Category ::
RF MOSFET Transistors
Mounting Style ::
SMD/SMT
Gain ::
17 DB
Output Power ::
450 W
Package / Case ::
SOT-634A-3
Maximum Operating Temperature ::
+ 150 C
Vds - Drain-Source Breakdown Voltage ::
100 V
Packaging ::
Tube
Id - Continuous Drain Current ::
54 A
Rds On - Drain-Source Resistance ::
85 MOhms
Manufacturer ::
NXP Semiconductors
Introduction
The BLA6H0912-500,112,from NXP Semiconductors,is RF MOSFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Send RFQ
Stock:
MOQ: