MMBTH10-4LT1G
Specifications
Voltage - Collector Emitter Breakdown (Max) ::
25V
Product Category ::
RF Bipolar Transistors
Gain ::
-
Factory Stock ::
177000
Transistor Type ::
NPN
Minimum Quantity ::
3000
Supplier Device Package ::
SOT-23-3 (TO-236)
Noise Figure (dB Typ @ F) ::
-
Part Status ::
Active
Current - Collector (Ic) (Max) ::
-
Power - Max ::
225mW
Packaging ::
Tape & Reel (TR)
@ Qty ::
0
Frequency - Transition ::
800MHz
DC Current Gain (hFE) (Min) @ Ic, Vce ::
120 @ 4mA, 10V
Operating Temperature ::
-55°C ~ 150°C (TJ)
Package / Case ::
TO-236-3, SC-59, SOT-23-3
Mounting Type ::
Surface Mount
Series ::
-
Manufacturer ::
Onsemi
Model Number:
MMBTH10-4LT1G
Introduction
The MMBTH10-4LT1G,from onsemi,is RF Bipolar Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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