ATF-511P8-TR1
Specifications
Vgs - Gate-Source Breakdown Voltage ::
- 5 V To 1 V
Technology ::
GaAs
Product Category ::
RF JFET Transistors
Mounting Style ::
SMD/SMT
Gain ::
14.8 DB
Transistor Type ::
EpHEMT
Pd - Power Dissipation ::
3 W
Package / Case ::
LPCC-8
Maximum Operating Temperature ::
+ 150 C
Vds - Drain-Source Breakdown Voltage ::
7 V
Packaging ::
Reel
Maximum Drain Gate Voltage ::
- 5 V To + 1 V
Id - Continuous Drain Current ::
1 A
Manufacturer ::
Avago / Broadcom
Introduction
The ATF-511P8-TR1,from Avago / Broadcom,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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