english
DMN2065UW-7
manufacturer:
Diodes Incorporated
Description:
MOSFET N CH 20V 2.8A SOT323
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±12V
Current - Continuous Drain (Id) @ 25°C ::
2.8A (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
5.4nC @ 4.5V
Manufacturer ::
Diodes Incorporated
Minimum Quantity ::
3000
Drive Voltage (Max Rds On, Min Rds On) ::
1.5V, 4.5V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
400pF @ 10V
Supplier Device Package ::
SOT-323
Part Status ::
Not For New Designs
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
56 MOhm @ 2A, 4.5V
Power Dissipation (Max) ::
430mW (Ta)
Package / Case ::
SC-70, SOT-323
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
1V @ 250µA
Drain To Source Voltage (Vdss) ::
20V
Model Number:
DMN2065UW-7
Introduction
The DMN2065UW-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
Related Products
DMN3005LK3-13
MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
DMT6009LFG-13
MOSFET 60V N-Ch Enh FET Low Rdson
DMTH6004SK3Q-13
MOSFET MOSFET BVDSS: 41V-60V
DMPH3010LK3Q-13
MOSFET MOSFET BVDSS: 25V~30V TO252 T&R 2.5K
DMP2035UFDF-13
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
DMN3023L-13
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
| Image | Part # | Description | |
|---|---|---|---|
|
|
DMN3005LK3-13 |
MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W
|
|
|
|
DMT6009LFG-13 |
MOSFET 60V N-Ch Enh FET Low Rdson
|
|
|
|
DMTH6004SK3Q-13 |
MOSFET MOSFET BVDSS: 41V-60V
|
|
|
|
DMPH3010LK3Q-13 |
MOSFET MOSFET BVDSS: 25V~30V TO252 T&R 2.5K
|
|
|
|
DMP2035UFDF-13 |
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
|
|
|
|
DMN3023L-13 |
MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A
|
Send RFQ
Stock:
MOQ: